{"title":"Atomic Layer Deposition (ALD)","description":"\u003cp\u003e\u003cstrong\u003eAtomic layer deposition (ALD) builds ultrathin, conformal oxide and nitride coatings one self-limited monolayer at a time — the technique of choice when you need pinhole-free films on porous electrodes, high-aspect-ratio scaffolds, or sensitive cathode powders.\u003c\/strong\u003e This collection groups the precursor delivery hardware, reactor platforms, and consumables used to run thermal and plasma-enhanced ALD at lab and pilot scale for battery, fuel-cell, electrolyzer, and broader electrochemistry research.\u003c\/p\u003e\n\n\u003cp\u003eALD's value in electrochemistry comes from three properties that no other vapor-phase route delivers together: angstrom-level thickness control, complete conformality on rough or porous geometries, and self-limiting surface chemistry that decouples coverage from line-of-sight. Typical electrochemistry use cases include Al2O3 \/ ZrO2 \/ TiO2 surface layers on layered, spinel, and olivine cathode particles to suppress electrolyte oxidation and transition-metal dissolution; LiPON, Li3PO4, or lithium-containing oxides as solid-electrolyte interlayers; protective coatings on lithium-metal and silicon anodes; conformal catalyst supports for electrolyzer and fuel-cell electrodes; and pinhole repair on thin-film current collectors.\u003c\/p\u003e\n\n\u003cp\u003eHardware in this section spans the full ALD workflow:\u003c\/p\u003e\n\n\u003cul\u003e\n  \u003cli\u003eThermal ALD reactors for standard oxide and nitride chemistries on flat substrates, foils, and small powder loads\u003c\/li\u003e\n  \u003cli\u003ePlasma-enhanced ALD systems for low-temperature processes and nitride films where thermal precursors are unreactive\u003c\/li\u003e\n  \u003cli\u003ePowder ALD configurations (rotary, fluidized-bed, agitated tray) for coating cathode and anode particles in batch quantities relevant to coin-cell and pouch-cell prototyping\u003c\/li\u003e\n  \u003cli\u003ePrecursor delivery accessories: bubblers, vapor-draw cylinders, heated manifolds, and inert-atmosphere loading hardware for moisture- and air-sensitive metal-organic precursors\u003c\/li\u003e\n  \u003cli\u003eConsumables and spares: reactor liners, gaskets, valves, and exhaust traps sized for typical lab throughput\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eALD sits alongside the other vapor-phase routes in this catalog. If you need conformality and sub-nanometer thickness control, ALD is the right starting point. If your target is thicker films, faster throughput, or heavier loadings, see the broader \u003ca href=\"\/collections\/vapor-phase-synthesis\"\u003eVapor-Phase Synthesis\u003c\/a\u003e section for chemical and physical vapor deposition platforms, and the parent Synthesis Equipment hub for solution-phase, mechanochemical, and high-temperature alternatives.\u003c\/p\u003e","products":[{"product_id":"eymbtaldm","title":"ECS-Y Mini Benchtop Thermal Atomic Layer Deposition (ALD) Machine (Sample: Max. 4\"), EYMBTALDM","description":"\u003cp\u003eA thermal atomic layer deposition (ALD) machine is a precise thin-film coating system that deposits materials one atomic layer at a time using alternating, self-limiting chemical reactions at elevated temperatures (150-350 degrees). It ensures high conformality and atomic-scale thickness control, ideal for high-aspect-ratio 3D structures and, typically, for creating oxides, nitrides, and other thin films\u003c\/p\u003e\n\u003cp\u003eThe key components and features are: (1) \u003cstrong\u003eReaction Chamber\u003c\/strong\u003e: Heated, high-vacuum chamber where the substrate (up to 6–8 inches, typically) is held. (2) \u003cstrong\u003ePrecursor Delivery System\u003c\/strong\u003e: Multiple heated gas lines with MFCs (Mass Flow Controllers) allow for introducing alternating precursors (e.g., metal-organic precursors and H2O, or O3). (3) \u003cstrong\u003ePulse\/Purge Valves\u003c\/strong\u003e: High-speed, high-temperature valves, such as those found on the Veeco Savannah, control the precise, alternating dosage and inert gas purge cycles.\u003c\/p\u003e\n\u003cp\u003eThe mini benchtop thermal ALD has following unique features: (1) \u003cstrong\u003eThroughput\u003c\/strong\u003e: These systems are \"one-at-a-time.\" Coating a full roll of foil for a pilot line would require a Spatial ALD or Roll-to-Roll system, which are much larger than benchtop units. (2) \u003cstrong\u003ePrecursor Costs\u003c\/strong\u003e: While the amount used is tiny, specialized precursors (like those for solid-state electrolyte coatings) can be expensive. (3) \u003cstrong\u003eCycle Time\u003c\/strong\u003e: ALD is a slow process. Deposition of a 5-10 nm layer can take 1 to 2 hours depending on the cycle purge times.\u003c\/p\u003e\n\u003cp\u003eThe general working mechanism of the thermal ALD process are shown below:\u003c\/p\u003e\n\u003cdiv style=\"text-align: start;\"\u003e\u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYMBTALDM_02_100x100.png?v=1777409245\" alt=\"\" style=\"float: none;\"\u003e\u003c\/div\u003e\n\u003ctable width=\"100%\"\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cem\u003ePart Number\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd\u003e\n\u003cul\u003e\n\u003cli\u003eEYMBTALDM (EY-MBTALDM)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cem\u003ePower\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd\u003e\n\u003cul\u003e\n\u003cli\u003eAC220V±10%, single phase, 50\/60Hz, 1500 W\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cem\u003eALD Machine Features\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd\u003e\n\u003cul\u003e\n\u003cli\u003eMax. Sample: 4\" wafer with thickness less than 5 mm\u003c\/li\u003e\n\u003cli\u003eHeating Temperature: RT-360 ℃\u003c\/li\u003e\n\u003cli\u003eFor powder sample, the special powder tray can be supplied upon request.\u003c\/li\u003e\n\u003cli\u003ePrecursor: 4*50 mL precursor bubblers (2 stainless steel and 2 heated silicone types) are included. The heating temperature is RT-180 ℃. \u003c\/li\u003e\n\u003cli\u003eSix fast-response ALD valves with heating temperature of RT-200℃. \u003c\/li\u003e\n\u003cli\u003eMFC: Max. 200 sccm\u003c\/li\u003e\n\u003cli\u003eVacuum gauge: Inficon brand with maximum range of 10 Torr.\u003c\/li\u003e\n\u003cli\u003eVacuum Pump with 30 m3\/h flow\u003c\/li\u003e\n\u003cli\u003eThe ALD parameters can be edited in the touch screen and the data can be recorded in real time. \u003c\/li\u003e\n\u003cli\u003eThe alarm and safety lock are available for monitoring the temperature, pressure, and flow. \u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cem\u003eCertification\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003eCE certified\u003c\/li\u003e\n\u003cli\u003eUL and CSA certification is available upon request at extra cost\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cem\u003eDimension\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003eL550 * W470 * H470 mm\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cem\u003eWeight\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003e~50 kg\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003cp\u003e\u003cstrong\u003eReferences\u003c\/strong\u003e:\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/abs\/10.1002\/adem.201300132\"\u003eA. Cappella, et al., High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD, Adv. Engineering Mater., 2013, 15, 1046-1050\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/onlinelibrary.wiley.com\/doi\/abs\/10.1002\/cvde.201207033\"\u003eS. E. Potts, et al., Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD, Chemical Vapor Deposition, 2013, 19, 125-133\u003c\/a\u003e. \u003c\/p\u003e","brand":"YMKJ","offers":[{"title":"Default Title","offer_id":47585641988326,"sku":"EYMBTALDM","price":8888888.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYMBTALDM_main.png?v=1777408871"},{"product_id":"eypcraldm","title":"ECS-Y Rotary Atomic Layer Deposition (ALD) Machine for Powder Coating, EYPCRALDM","description":"\u003cp\u003eRotary Bed Atomic Layer Deposition (Rotary ALD) is a mechanical agitation method specifically designed to overcome the limitations of static beds and the complexities of fluidization when coating powders. It uses physical rotation to tumble the powder, ensuring every surface is exposed to the precursor gases.\u003c\/p\u003e\n\u003cp\u003eIn a rotary system, the powder is placed inside a drum or cylinder that rotates within a vacuum chamber. This movement creates a constant \"tumbling\" effect—similar to a clothes dryer or a cement mixer—which prevents particle agglomeration and eliminates \"dead zones\" where precursors might not reach. (1) \u003cstrong\u003eMechanical Mixing\u003c\/strong\u003e: The drum rotates at a controlled speed (typically 10 to 100 RPM for lab scale. (2) \u003cstrong\u003ePrecursor Dosing\u003c\/strong\u003e: Gases are introduced through the axis of rotation or via a fixed delivery tube inside the drum. (3) \u003cstrong\u003eSelf-Limiting Reaction\u003c\/strong\u003e: Just like standard ALD, the gas reacts with the surface of the moving particles until all sites are occupied. (4) \u003cstrong\u003ePurging\u003c\/strong\u003e: Inert gas sweeps through the tumbling bed to remove byproducts and excess precursor before the next cycle begins.  \u003c\/p\u003e\n\u003cp\u003eRotary ALD is particularly useful when working with cohesive powders or high-density materials (like certain metal oxides or catalysts) that are notoriously difficult to fluidize. It allows you to achieve the same Al2O3 or TiO2 conformal coating without the risk of \"slugging\" or \"channeling\" that often occurs in gas-fed columns.\u003c\/p\u003e\n\u003cp\u003eThe diagram of the general working mechanism of the rotary ALD process is shown below:\u003c\/p\u003e\n\u003cdiv style=\"text-align: start;\"\u003e\u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYPCRALDM_main_160x160.png?v=1777484663\" style=\"margin-bottom: 16px; float: none;\"\u003e\u003c\/div\u003e\n\u003ctable style=\"height: 1246.2px;\" width=\"100%\"\u003e\n\u003ctbody\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003ePart Number\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eEYPCRALDM (EY-PC-RALDM)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003ePower\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eAC380V±10%, three-phases, 50\/60Hz, 7 kW\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 571.4px;\"\u003e\n\u003ctd style=\"height: 571.4px;\"\u003e\u003cem\u003eRotary ALD Machine Features\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 571.4px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eSS304 dual-vacuum chamber design \u003c\/li\u003e\n\u003cli\u003ePowder Container Volume: 0.33 L (two included), the recommended maximum loading volume ≤0.13L (For LiCoO2 as example, ~100 g). The rotation speed\" 0-60 rpm, adjustable\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e        \u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYPCRALDM_05_100x100.png?v=1777487314\" alt=\"\" style=\"float: none;\" width=\"94\" height=\"94\"\u003e       \u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYPCRALDM_03_100x100.png?v=1777485851\" alt=\"\" style=\"float: none;\"\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eProcessing Temperature: RT-300 ℃\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003ePrecursor: One 200 mL metal precursor bubbler with two channels; 4*50 mL precursor bubblers with single channel for metal- and oxidized sources. The heating temperature is RT-190 ℃. Two more connection ports are reserved for optional O3 or H2S precursors. \u003c\/li\u003e\n\u003cli\u003eSix fast-response ALD valves with heating temperature of RT-200℃. \u003c\/li\u003e\n\u003cli\u003eMFC: Max. 200 sccm\u003c\/li\u003e\n\u003cli\u003eVacuum gauge: one set with 100 Torr and one set with 1000 Torr to show the inner and outer chamber vacuum level. The ultimate vacuum is \u0026lt;0.1 Torr\u003c\/li\u003e\n\u003cli\u003eVacuum Pump with 17 m3\/h flow\u003c\/li\u003e\n\u003cli\u003eThe ALD parameters can be edited in the touch screen and the data can be recorded in real time. \u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e          \u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYPCRALDM_04_100x100.png?v=1777486932\" alt=\"\" style=\"float: none;\"\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eThe alarm and safety lock are available for monitoring the temperature, pressure, and flow. \u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 417.2px;\"\u003e\n\u003ctd style=\"height: 417.2px;\"\u003e\u003cem\u003e\u003cspan style=\"color: rgb(255, 42, 0);\"\u003eOptional\u003c\/span\u003e Features for Add-On (not included)\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 417.2px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eThe QCM unit can be added to monitor the growth rate and thickness in real time. Accuracy is 0.1 Å. The maximum measuring temperature is 200 ℃\u003c\/li\u003e\n\u003cli\u003eThe glovebox (O2\/H2O\u0026lt;1 ppm) can be integrated for precursor loading and transfer.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e            \u003cimg style=\"float: none;\" alt=\"\" src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYPCRALDM_06_100x100.png?v=1777487826\"\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eCustomized substrate stack for holding multiple substrates (50*85 mm) can be supplied upon request.\u003c\/li\u003e\n\u003cli\u003eO3 generator with O2 flow meter can be supplied to replace the conventional H2O oxidant source. \u003c\/li\u003e\n\u003cli\u003eH2S gas flow channel can be added upon request. \u003c\/li\u003e\n\u003cli\u003eThe solid precursor bubbler with dual channels can be supplied upon request.\u003c\/li\u003e\n\u003cli\u003eThe RGA module can be added to analyze the gas residuals.\u003cbr\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 67.2px;\"\u003e\n\u003ctd style=\"height: 67.2px;\"\u003e\u003cem\u003eCertification\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 67.2px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003eCE certified\u003c\/li\u003e\n\u003cli\u003eUL and CSA certification is available upon request at extra cost\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003eDimension\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003eL1150 * W925 * H1850 mm\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003eWeight\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003e~350 kg\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003cp\u003e\u003cstrong\u003eReferences\u003c\/strong\u003e:\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/pubs.aip.org\/avs\/jva\/article-abstract\/38\/5\/052403\/246727\/High-capacity-rotary-drum-for-atomic-layer?redirectedFrom=fulltext\"\u003eM. W. Coile, et al., High-capacity rotary drum for atomic layer deposition onto powders and small mechanical parts in a hot-walled viscous flow reactor, J. Vac. Sci. Technol. A, 2020, 38, 052403.\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/www.sciencedirect.com\/science\/article\/abs\/pii\/S0040609025000574\"\u003eK. Seong, et al., Rotary-type atomic layer deposition of aluminum oxide coating on micropowder for secondary battery anode applications, Thin Solid Films, 2025, 817, 140656.\u003c\/a\u003e \u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/abs\/10.1002\/admi.201800581\"\u003eS. Adhikari, et al., Progress in Powder Coating Technology Using Atomic Layer Deposition, Adv. Mater. Interfaces, 2018, 5, 1800581.\u003c\/a\u003e \u003c\/p\u003e","brand":"YMKJ","offers":[{"title":"Default Title","offer_id":47589236113638,"sku":"EYPCRALDM","price":8888888.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYPCRALDM_main.png?v=1777484663"},{"product_id":"eyctaldm","title":"ECS-Y Compact Thermal Atomic Layer Deposition (ALD) Machine (Sample: Max. 8\"), EYCTALDM","description":"\u003cp\u003eA thermal atomic layer deposition (ALD) machine is a precise thin-film coating system that deposits materials one atomic layer at a time using alternating, self-limiting chemical reactions at elevated temperatures (150-350 degrees). It ensures high conformality and atomic-scale thickness control, ideal for high-aspect-ratio 3D structures and, typically, for creating oxides, nitrides, and other thin films\u003c\/p\u003e\n\u003cp\u003eThe key components and features are: (1) \u003cstrong\u003eReaction Chamber\u003c\/strong\u003e: Heated, high-vacuum chamber where the substrate (up to 6–8 inches, typically) is held. (2) \u003cstrong\u003ePrecursor Delivery System\u003c\/strong\u003e: Multiple heated gas lines with MFCs (Mass Flow Controllers) allow for introducing alternating precursors (e.g., metal-organic precursors and H2O, or O3). (3) \u003cstrong\u003ePulse\/Purge Valves\u003c\/strong\u003e: High-speed, high-temperature valves, such as those found on the Veeco Savannah, control the precise, alternating dosage and inert gas purge cycles.\u003c\/p\u003e\n\u003cp\u003eThe mini benchtop thermal ALD has following unique features: (1) \u003cstrong\u003eThroughput\u003c\/strong\u003e: These systems are \"one-at-a-time.\" Coating a full roll of foil for a pilot line would require a Spatial ALD or Roll-to-Roll system, which are much larger than benchtop units. (2) \u003cstrong\u003ePrecursor Costs\u003c\/strong\u003e: While the amount used is tiny, specialized precursors (like those for solid-state electrolyte coatings) can be expensive. (3) \u003cstrong\u003eCycle Time\u003c\/strong\u003e: ALD is a slow process. Deposition of a 5-10 nm layer can take 1 to 2 hours depending on the cycle purge times.\u003c\/p\u003e\n\u003cp\u003eThe general working mechanism of the thermal ALD process are shown below:\u003c\/p\u003e\n\u003cdiv style=\"text-align: start;\"\u003e\u003cimg style=\"float: none;\" alt=\"\" src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYMBTALDM_02_100x100.png?v=1777409245\"\u003e\u003c\/div\u003e\n\u003ctable width=\"100%\" style=\"height: 764.4px;\"\u003e\n\u003ctbody\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003ePart Number\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eEYCTALDM (EY-CTALDM)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003ePower\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eAC380V±10%, three-phases, 50\/60Hz, 15 kW\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 341.6px;\"\u003e\n\u003ctd style=\"height: 341.6px;\"\u003e\u003cem\u003eALD Machine Features\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 341.6px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eMax. Sample: 8\" wafer (200mm*200mm)\u003c\/li\u003e\n\u003cli\u003eHeating Temperature for Sample Stage: RT-500 ℃\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003ePrecursor: 3*50 mL precursor bubblers and one reaction channel are included. The heating temperature is RT-200 ℃. \u003c\/li\u003e\n\u003cli\u003eIt can be upgraded to six precursors and two reaction channels upon request.\u003c\/li\u003e\n\u003cli\u003eFour fast-response ALD valves with heating temperature of RT-200℃. \u003c\/li\u003e\n\u003cli\u003eMFC: Max. 200 sccm\u003c\/li\u003e\n\u003cli\u003eVacuum gauge: dual-grade, 0.0005 Torr -1000 Torr.\u003c\/li\u003e\n\u003cli\u003eVacuum Pump can support \u0026lt;5x10-3 Torr vacuum level\u003c\/li\u003e\n\u003cli\u003eThe ALD parameters can be edited in the individual touch screen and the data can be recorded in real time. \u003c\/li\u003e\n\u003cli\u003eThe alarm and safety lock are available for monitoring the temperature, pressure, and flow. \u003c\/li\u003e\n\u003cli\u003eThe deposition uniformity is \u0026gt;98% (take SnO2 as an example)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e          \u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYCTALDM_02_100x100.png?v=1777491281\" alt=\"\" style=\"float: none;\"\u003e\u003c\/p\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 165.2px;\"\u003e\n\u003ctd style=\"height: 165.2px;\"\u003e\u003cem\u003e\u003cspan style=\"color: rgb(255, 42, 0);\"\u003eOptional\u003c\/span\u003e Module for Add-On (not included)\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 165.2px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eThe QCM unit can be added to monitor the growth rate and thickness in real time. Accuracy is 0.1 Å. The maximum measuring temperature is 200 ℃\u003c\/li\u003e\n\u003cli\u003eO3 generator with O2 flow meter can be supplied to replace the conventional H2O oxidant source. \u003c\/li\u003e\n\u003cli\u003eThe plasma module can be upgraded to realize PEALD upon request. \u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 67.2px;\"\u003e\n\u003ctd style=\"height: 67.2px;\"\u003e\u003cem\u003eCertification\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 67.2px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003eCE certified\u003c\/li\u003e\n\u003cli\u003eUL and CSA certification is available upon request at extra cost\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003eDimension\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003eL1150 * W680 * H1050 mm\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003eWeight\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003e~400 kg\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003cp\u003e\u003cstrong\u003eReferences\u003c\/strong\u003e:\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/abs\/10.1002\/adem.201300132\"\u003eA. Cappella, et al., High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD, Adv. Engineering Mater., 2013, 15, 1046-1050\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/onlinelibrary.wiley.com\/doi\/abs\/10.1002\/cvde.201207033\"\u003eS. E. Potts, et al., Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD, Chemical Vapor Deposition, 2013, 19, 125-133\u003c\/a\u003e. \u003c\/p\u003e","brand":"YSKJ","offers":[{"title":"Default Title","offer_id":47589347786982,"sku":"EYCTALDM","price":8888888.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYCTALDM_main.png?v=1777490895"},{"product_id":"eypealdm","title":"ECS-Y Plasma-Enhanced Atomic Layer Deposition (PEALD) Machine (Sample: Max. 8\"), EYPEALDM","description":"\u003cp\u003ePlasma-Enhanced Atomic Layer Deposition (PE-ALD) is an advanced variant of the ALD process that replaces thermal energy with highly reactive plasma species (radicals, ions, and electrons) to drive surface reactions. While thermal ALD relies on heating the substrate—often to temperatures between 200°C and 400°C—PE-ALD can achieve high-quality, dense films at much lower temperatures, sometimes even at room temperature.\u003c\/p\u003e\n\u003cp\u003eIn a standard thermal cycle, the second precursor (e.g., water or ammonia) requires thermal energy to react with the first precursor on the surface. In PE-ALD, a plasma discharge (typically O2, N2, or H2 plasma) generates reactive radicals that provide the necessary chemical energy.\u003c\/p\u003e\n\u003cp\u003eThe diagram of the working mechanism of the plasma-enhanced ALD process is shown below:\u003c\/p\u003e\n\u003cdiv style=\"text-align: start;\"\u003e\u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYPEALDM_02_160x160.png?v=1777492023\" style=\"margin-bottom: 16px; float: none;\"\u003e\u003c\/div\u003e\n\u003ctable style=\"height: 703.8px;\" width=\"100%\"\u003e\n\u003ctbody\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003ePart Number\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eEYPEALDM (EY-PEALDM)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003ePower\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eAC380V±10%, three-phases, 50\/60Hz, 18 kW\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 320.2px;\"\u003e\n\u003ctd style=\"height: 320.2px;\"\u003e\u003cem\u003eALD Machine Features\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 320.2px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eMax. Sample: 8\" wafer (200mm*200mm)\u003c\/li\u003e\n\u003cli\u003eHeating Temperature for Sample Stage: RT-500 ℃\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003ePrecursor: 3*50 mL precursor bubblers and one reaction channel are included. The heating temperature is RT-200 ℃. \u003c\/li\u003e\n\u003cli\u003eIt can be upgraded to six precursors and two reaction channels upon request.\u003c\/li\u003e\n\u003cli\u003eFour fast-response ALD valves with heating temperature of RT-200℃. \u003c\/li\u003e\n\u003cli\u003eMFC: Max. 200 sccm\u003c\/li\u003e\n\u003cli\u003e\u003cspan style=\"color: rgb(255, 42, 0);\"\u003eRF power: 0-1000 W \u003c\/span\u003e\u003c\/li\u003e\n\u003cli style=\"color: rgb(255, 42, 0);\"\u003e\u003cspan style=\"color: rgb(255, 42, 0);\"\u003eThe plasma system can support four gas flows\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003eVacuum gauge: dual-grade, 0.0005 Torr -1000 Torr.\u003c\/li\u003e\n\u003cli\u003eVacuum Pump can support \u0026lt;5x10-3 Torr vacuum level\u003c\/li\u003e\n\u003cli\u003eThe ALD parameters can be edited in the individual touch screen and the data can be recorded in real time. \u003c\/li\u003e\n\u003cli\u003eThe alarm and safety lock are available for monitoring the temperature, pressure, and flow. \u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 126px;\"\u003e\n\u003ctd style=\"height: 126px;\"\u003e\u003cem\u003eOptional Module for Add-On\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 126px;\"\u003e\n\u003cul\u003e\n\u003cli\u003eThe QCM unit can be added to monitor the growth rate and thickness in real time. Accuracy is 0.1 Å. The maximum measuring temperature is 200 ℃\u003c\/li\u003e\n\u003cli\u003eO3 generator with O2 flow meter can be supplied to replace the conventional H2O oxidant source. \u003cbr\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 67.2px;\"\u003e\n\u003ctd style=\"height: 67.2px;\"\u003e\u003cem\u003eCertification\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 67.2px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003eCE certified\u003c\/li\u003e\n\u003cli\u003eUL and CSA certification is available upon request at extra cost\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003eDimension\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003eL1150 * W750 * H1450 mm\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr style=\"height: 47.6px;\"\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\u003cem\u003eWeight\u003c\/em\u003e\u003c\/td\u003e\n\u003ctd style=\"height: 47.6px;\"\u003e\n\u003cdiv\u003e\n\u003cul\u003e\n\u003cli\u003e~500 kg\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003cp\u003e\u003cstrong\u003eReferences\u003c\/strong\u003e:\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/www.sciencedirect.com\/science\/article\/abs\/pii\/S0040609011004998\"\u003eHyungjun Kim, et al., Characteristics and applications of plasma enhanced-atomic layer deposition, Thin Solid Films, 2011, 519, 6639-6644\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/pubs.aip.org\/avs\/jva\/article-abstract\/38\/4\/040801\/246987\/The-role-of-plasma-in-plasma-enhanced-atomic-layer?redirectedFrom=fulltext\"\u003eD. R. Boris, et al., The role of plasma in plasma-enhanced atomic layer deposition of crystalline films, J. Vac. Sci. Technol. A, 2020, 38, 040801.\u003c\/a\u003e \u003c\/p\u003e","brand":"YSKJ","offers":[{"title":"Default Title","offer_id":47589365874918,"sku":"EYPEALDM","price":8888888.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/files\/EYPEALDM_main.png?v=1777492584"}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6591\/1526\/collections\/EYMBTALDM_main.png?v=1777409320","url":"https:\/\/echemsupplies.com\/collections\/atomic-layer-deposition.oembed","provider":"EChem Supplies","version":"1.0","type":"link"}